In this course, you will learn the advanced Wide Band Gap (WBG) high-power semiconductor measurement techniques.
Power devices are a key component enabling the electrification of the transportation, renewable energy and industrial markets. To facilitate needed advances in power device design, advanced wide band gap (WBG) semiconductor technologies, based on silicon carbide (SiC) and gallium nitride (GaN), are being commercialized. WBG semiconductors provide major leaps in speed (10-100x faster than older designs), higher voltage and thermal operation, resulting in improved efficiency and reduced size and cost.
Fully characterizing SiC or GaN based WBG device requires both static and dynamic measurements.
Who should take Advanced Wide Band Gap High-Power Semiconductor Measurement Techniques?
This course is designed for WBG power device designers concerned with accurate and efficient characterizing.
- WBG device importance
- Technical challenges for WBG device characterization
- Keysight solutions covering various applications (High Current and High Voltage, High Voltage Capacitance, GaN Current Collapse, Gate Charge, Double pulse test)